CMOS Compatible Hf 0.5 Zr 0.5 O 2 Ferroelectric Tunnel Junctions for Neuromorphic Devices.
Bernhard MittermeierAndreas DörflerAnna HoroschenkoffRajesh KatochChristina SchindlerAndreas RuedigerGitanjali KolhatkarPublished in: Adv. Intell. Syst. (2019)
Keyphrases
- floating gate
- high speed
- high frequency
- low cost
- low power
- mobile devices
- power consumption
- analog vlsi
- connected components
- power supply
- intelligent environments
- mobile applications
- mahalanobis distance
- endpoints
- simulation model
- line segments
- personal computer
- neural network
- embedded systems
- focal plane
- low power consumption
- multiresolution
- hd video
- junction detection