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Fabrication of High Performance High Electron Mobility Transistor Design Based on III-V Compound Semiconductor.
Hla Myo Tun
Myat Su Nwe
Published in:
RoViSP (2021)
Keyphrases
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design process
high speed
integrated circuit
data sets
wide range
engineering design
electrical properties
real time
case study
design methodology
design space
high reliability