A 6.4Gb/s/pin at sub-1V supply voltage TX-interleaving technique for mobile DRAM interface.
Chang-Kyo LeeMin-Su AhnDaesik MoonKiho KimYoon-Joo EomWon-Young LeeJongmin KimSanghyuk YoonBaekkyu ChoiSeokhong KwonJoon-Young ParkSeung-Jun BaeYong-Cheol BaeJung-Hwan ChoiSeong-Jin JangGyo-Young JinPublished in: VLSIC (2015)
Keyphrases
- high speed
- mobile devices
- mobile phone
- mobile learning
- user friendly
- mobile environments
- mobile communication
- high density
- location aware
- user interface
- low voltage
- context aware
- mobile applications
- memetic algorithm
- computing environments
- mobile users
- m learning
- smart phones
- main memory
- quality of service
- direct manipulation