Strain engineering for bumping over IPs: Numerical investigations of thermo-mechanical stress induced mobility variations for CMOS 32 nm and beyond.
Vincent FioriSébastien Gallois-GarreignotHervé JaouenClément TavernierPublished in: Microelectron. Reliab. (2013)
Keyphrases
- stress distribution
- cmos technology
- low cost
- high speed
- silicon on insulator
- finite element analysis
- engineering design
- computer science
- finite element model
- computer aided design
- nm technology
- power consumption
- software engineering
- artificial intelligence
- mobility patterns
- real time
- mobile networks
- sensitivity analysis
- metal oxide semiconductor
- low power
- mechanical design
- human mobility
- delay insensitive