A 6.5-µW/MHz Charge Buffer With 7-fF Input Capacitance in 65-nm CMOS for Noncontact Electropotential Sensing.
Siddharth JoshiChul KimGert CauwenberghsPublished in: IEEE Trans. Circuits Syst. II Express Briefs (2016)
Keyphrases
- high speed
- cmos technology
- low power
- nm technology
- power dissipation
- power consumption
- image sensor
- real time
- low cost
- metal oxide
- input data
- silicon on insulator
- high frequency
- heuristic search
- low voltage
- sensor networks
- delay insensitive
- clock frequency
- analog vlsi
- metal oxide semiconductor
- single chip
- charge coupled devices