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A Bit-Interleaved 2-Port Subthreshold 6T SRAM Array with High Write-Ability and SNM-Free Read in 90 nm.

Abhijit SilMagdy A. Bayoumi
Published in: J. Low Power Electron. (2011)
Keyphrases
  • random access memory
  • low voltage
  • design considerations
  • focal plane
  • cmos technology
  • read write
  • embedded dram
  • leakage current
  • power consumption
  • neural network
  • database systems
  • infrared
  • low power