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Reliability of the doping concentration in an ultra-thin body and buried oxide silicon on insulator (SOI) and comparison with a partially depleted SOI.

Wen-Teng ChangChun-Ming LaiWen-Kuan Yeh
Published in: Microelectron. Reliab. (2014)
Keyphrases
  • silicon on insulator
  • ibm power processor
  • cmos technology
  • high speed