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A 7nm Fin-FET 4.04-Mb/mm2 TCAM with Improved Electromigration Reliability Using Far-Side Driving Scheme and Self-Adjust Reference Match-Line Amplifier.
Makoto Yabuuchi
Masao Morimoto
Yasumasa Tsukamoto
Shinji Tanaka
Published in:
VLSI Circuits (2020)
Keyphrases
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power consumption
cross section
line segments
times faster
digital libraries
dynamic range
average error
parallel search