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A 7nm Fin-FET 4.04-Mb/mm2 TCAM with Improved Electromigration Reliability Using Far-Side Driving Scheme and Self-Adjust Reference Match-Line Amplifier.

Makoto YabuuchiMasao MorimotoYasumasa TsukamotoShinji Tanaka
Published in: VLSI Circuits (2020)
Keyphrases
  • power consumption
  • cross section
  • line segments
  • times faster
  • digital libraries
  • dynamic range
  • average error
  • parallel search