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Correlation between MOSFETs breakdown and 4H-SiC epitaxial defects.

Patrick FiorenzaSalvatore AdamoMario Santo AlessandrinoCettina BottariBeatrice CarboneClarice Di MartinoAlfio RussoMario SaggioCarlo VenutoElisa VitanzaEdoardo ZanettiFilippo GiannazzoFabrizio Roccaforte
Published in: IRPS (2021)
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