A scaleable model for STI mechanical stress effect on layout dependence of MOS electrical characteristics.
Ke-Wei SuYi-Ming SheuChung-Kai LinSheng-Jier YangWen-Jya LiangXuemei XiChung-Shi ChiangJaw-Kang HerYu-Tai ChiaCarlos H. DiazChenming HuPublished in: CICC (2003)