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A 0.6 V Dual-Rail Compiler SRAM Design on 45 nm CMOS Technology With Adaptive SRAM Power for Lower VDD_min VLSIs.

Yen-Huei ChenGary ChanShao-Yu ChouHsien-Yu PanJui-Jen WuRobin LeeHung-Jen LiaoHiroyuki Yamauchi
Published in: IEEE J. Solid State Circuits (2009)
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