A 0.45 W 18% PAE E-Band Power Amplifier in 100 nm InGaAs pHEMT Technology.

Dixian Zhao Yongran Yi

Published in: Wirel. Commun. Mob. Comput. (2018)

Keyphrases

high power
silicon on insulator
st century
power consumption
data processing
low power
technological advances
cmos technology
social networks
cost effective
real time
neural network
case study
personal computer
ibm power processor