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A Three-Stage Charge Pump With Forward Body Biasing in 28 nm UTBB FD-SOI CMOS.
Carlos A. Pinheiro
Fabián Olivera
Antonio Petraglia
Published in:
IEEE Trans. Circuits Syst. I Regul. Pap. (2021)
Keyphrases
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silicon on insulator
cmos technology
human body
ibm power processor
optimal design
real time
high pressure
dynamic random access memory
forward and backward
nm technology
neural network
power consumption
low power
learning stage
charge coupled devices