Impact of Si/Al implantation on the forming voltage and pre-forming conduction modes in HfO2 based OxRAM cells.
M. BarlasBoubacar TraoreLaurent GrenouilletStefania BernasconiPhilippe BlaiseMouhamad AlayanBenoid SklenardEric JalaguierPhilippe RodriguezF. MazenE. VilainM. GuillermetSimon JeannotElisa VianelloLuca PerniolaPublished in: ESSDERC (2016)