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A Half-Select Disturb-Free 11T SRAM Cell With Built-In Write/Read-Assist Scheme for Ultralow-Voltage Operations.

Yajuan HeJiubai ZhangXiaoqing WuXin SiShaowei ZhenBo Zhang
Published in: IEEE Trans. Very Large Scale Integr. Syst. (2019)
Keyphrases
  • write operations
  • read write
  • data access
  • low voltage
  • power system
  • power consumption
  • neural network
  • selection algorithm
  • data transmission
  • disk drives
  • high voltage
  • high throughput
  • hard disk