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A Half-Select Disturb-Free 11T SRAM Cell With Built-In Write/Read-Assist Scheme for Ultralow-Voltage Operations.
Yajuan He
Jiubai Zhang
Xiaoqing Wu
Xin Si
Shaowei Zhen
Bo Zhang
Published in:
IEEE Trans. Very Large Scale Integr. Syst. (2019)
Keyphrases
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write operations
read write
data access
low voltage
power system
power consumption
neural network
selection algorithm
data transmission
disk drives
high voltage
high throughput
hard disk