Novel vertical channel double gate structures for high density and low power flash memory applications.
Ru HuangFaLong ZhouYimao CaiDaKe WuXing ZhangPublished in: Sci. China Ser. F Inf. Sci. (2008)
Keyphrases
- field effect transistors
- high density
- low power
- high power
- flash memory
- power consumption
- low cost
- high speed
- data center
- low density
- embedded systems
- solid state
- thin film
- file system
- cmos technology
- main memory
- digital signal processing
- storage devices
- steady state
- logic circuits
- nearest neighbor
- image sensor
- random access
- small size
- database
- data storage
- database systems
- mathematical analysis
- b tree
- real time