Login / Signup

A 135mV 0.13μW process tolerant 6T subthreshold DTMOS SRAM in 90nm technology.

Myeong-Eun HwangKaushik Roy
Published in: CICC (2008)
Keyphrases
  • power consumption
  • neural network
  • low power
  • development process
  • nm technology
  • computational complexity
  • fuzzy logic