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Mos2 transistor gated by PMMA-based electrolyte for sub-1 V operation.

Hongwei TangFuyou LiaoXinzhi ZhangJianan DengJing WanWenzhong Bao
Published in: ASICON (2019)
Keyphrases
  • electron beam
  • integrated circuit
  • high speed
  • low power
  • information systems
  • x ray