A Wide Range Spatial Frequency Analysis of Intra-Die Variations with 4-mm 4000 × 1 Transistor Arrays in 90nm CMOS.
David LevacqTakuya MinakawaMakoto TakamiyaTakayasu SakuraiPublished in: CICC (2007)
Keyphrases
- frequency analysis
- wide range
- metal oxide semiconductor
- high speed
- low power
- focal plane
- frequency domain
- cmos technology
- spatial information
- low cost
- power consumption
- circuit design
- low voltage
- power dissipation
- integrated circuit
- power spectrum
- silicon on insulator
- nm technology
- spatio temporal
- leakage current
- feature selection
- multiresolution
- feature space
- floating gate
- multiscale
- image sequences