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The impacts of high tensile stress CESL and geometry design on device performance and reliability for 90 nm SOI nMOSFETs.
Chieh-Ming Lai
Yean-Kuen Fang
Chien-Ting Lin
Chia-Wei Hsu
Wen-Kuan Yeh
Published in:
Microelectron. Reliab. (2007)
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