Impact of channel thickness scaling on the performance of GaN-on-Si RF HEMTs on highly C-doped GaN buffer.
AliReza AlianRaúl RodríguezSachin YadavUthayasankaran PeralaguArturo Sibaja HernandezVamsi PutchaMing ZhaoRana ElKashlanBjorn VermeerschHao YuErik BuryAhmad KhaledNadine CollaertBertrand ParvaisPublished in: ESSDERC (2022)