High Performance 5 nm Si Nanowire FETs with a Record Small SS = 2.3 mV/dec and High Transconductance at 5.5 K Enabled by Dopant Segregated Silicide Source/Drain.
Yi HanJingxuan SunJin Hee BaeDetlev GrützmacherJoachim KnochQing-Tai ZhaoPublished in: VLSI Technology and Circuits (2023)