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Tunnel FET with non-uniform gate capacitance for improved device and circuit level performance.
Cem Alper
Luca De Michielis
Nilay Dagtekin
Livio Lattanzio
Adrian M. Ionescu
Published in:
ESSDERC (2012)
Keyphrases
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field effect transistors
high speed
steady state
high density
semiconductor devices
mathematical analysis
high frequency
circuit design
chip design
markov chain
real time
data sets
high level
higher level
levels of abstraction
metal oxide semiconductor