Double Layers Omega FETs with Ferroelectric HfZrO2 for One-Transistor Memory.

Kuan-Ting Chen C. Lo Y.-Y. Lin C.-Y. Chueh C. Chang G.-Y. Siang Y.-J. Tseng Y.-J. Yang F.-C. Hsieh S.-H. Chang H. Liang S.-H. Chiang J.-H. Liu Y.-D. Lin P.-C. Yeh C.-Y. Wang H.-Y. Yang P.-J. Tzeng M.-H. Liao Shu-Tong Chang Y.-Y. Tseng Min-Hung Lee

Published in: IRPS (2020)