Login / Signup
A 6-b 1.6-GS/s ADC With Redundant Cycle One-Tap Embedded DFE in 90-nm CMOS.
Ehsan Zhian Tabasy
Ayman Shafik
Shan Huang
Noah Hae-Woong Yang
Sebastian Hoyos
Samuel Palermo
Published in:
IEEE J. Solid State Circuits (2013)
Keyphrases
</>
cmos technology
silicon on insulator
analog to digital converter
high speed
dynamic random access memory
power supply
metal oxide semiconductor
embedded systems
low cost
single chip
power consumption
low voltage
analog vlsi
bitstream
highly redundant
nm technology