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Innovative device source/drain and channel implantation for MOS transistors in ultra low power subthreshold circuit applications.
MunEm Hossain
Masud H. Chowdhury
Published in:
NEWCAS (2016)
Keyphrases
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field effect transistors
ultra low power
steady state
semiconductor devices
high density
low power
mathematical analysis
high speed
noisy channel
markov chain
logic circuits
multi channel
power consumption
electronic circuits
power reduction
delay insensitive