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An exact measurement and repair circuit of TSV connections for 128GB/s high-bandwidth memory(HBM) stacked DRAM.

Dong-Uk LeeKyung Whan KimKwan-Weon KimKang Seol LeeSang Jin ByeonJin-Hee ChoHan Ho JinSang Kyun NamJaejin LeeJun Hyun ChunSung-Joo Hong
Published in: VLSIC (2014)
Keyphrases
  • high bandwidth
  • high density
  • high speed
  • main memory
  • end to end
  • low latency
  • low voltage
  • memory subsystem
  • data center
  • application specific
  • fiber optic
  • data acquisition
  • general purpose