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AlN/GaN/AlN HEMTs on Bulk AlN Substrates with High Drain Current Density > 2.8 A/mm and Average Breakdown Field > 2 MV/cm.
Eungkyun Kim
Yu-Hsin Chen
Jimy Encomendero
Debdeep Jena
Huili Grace Xing
Published in:
DRC (2024)
Keyphrases
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