Temporal Noise and -105dB Parasitic Light Sensitivity Backside-Illuminated 2.3µm-Pixel Voltage-Domain Global Shutter CMOS Image Sensor Using High-Capacity DRAM Capacitor Technology.
Jaekyu LeeSeung Sik KimIn-Gyu BaekHeesung ShimTaehoon KimTaehyoung KimJungchan KyoungDongmo ImJinyong ChoiKeunYeong ChoDaehoon KimHaemin LimMin-Woong SeoJuYoung KimDoowon KwonJiyoun SongJiyoon KimMinho JangJoosung MoonHyunchul KimChong Kwang ChangJinGyun KimKyoungmin KohHanjin LimJungChak AhnHyeongsun HongKyupil LeeHo-Kyu KangPublished in: ISSCC (2020)