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A Fully Integrated 320 GHz Coherent Imaging Transceiver in 130 nm SiGe BiCMOS.
Chen Jiang
Ali Mostajeran
Ruonan Han
Mohammad Emadi
Hani Sherry
Andreia Cathelin
Ehsan Afshari
Published in:
IEEE J. Solid State Circuits (2016)
Keyphrases
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fully integrated
mixed signal
cmos technology
high resolution
frequency band
high speed
low power
power consumption
thin film
data acquisition
ultra wide band
database systems
spectral resolution
workflow management
image sensor
multi channel
x ray
data structure