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Measurement of Charge Evolution in Oxides of DC Stressed MOS Structures.

Ludovic BoyerPetru Notingher Jr.Serge AgnelBernard RoussetJean-Louis Sanchez
Published in: IAS (2010)
Keyphrases
  • field effect transistors
  • real time
  • real world
  • multiscale
  • video sequences
  • relational databases
  • evolution process
  • measurement model