Doping-Optimized Back-illuminated Single-Photon Avalanche Diode in Stacked 40 nm CIS Technology Achieving 60% PDP at 905 nm.
Eunsung ParkWon-Yong HaDoyoon EomDae-Hwan AhnHyuk AnSuhyun YiKyung-Do KimJongchae KimWoo-Young ChoiMyung-Jae LeePublished in: VLSI Technology and Circuits (2023)