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A 135 GBps/Gbit 0.66 pJ/bit Stacked Embedded DRAM with Multilayer Arrays by Fine Pitch Hybrid Bonding and Mini-TSV.

Song WangBing YuWenwu XiaoFujun BaiXiaodong LongLiang BaiXuerong JiaFengguo ZuoJie TanYixin GuoPeng SunJun ZhouQiong ZhanSheng HuYu ZhouYi KangQiwei RenXiping Jiang
Published in: VLSI Technology and Circuits (2023)
Keyphrases
  • random access memory
  • embedded dram
  • design considerations
  • low voltage
  • low cost
  • memory access