Eliminating Leakage in Volatile Memory with Anti-Ferroelectric Transistors.
Hongtao ZhongZijie ZhengKai NiXiao GongHuazhong YangXueqing LiPublished in: CoRR (2022)
Keyphrases
- memory requirements
- integrated circuit
- low memory
- power consumption
- associative memory
- high levels
- image processing
- cmos technology
- limited memory
- computing power
- memory usage
- computational power
- high density
- low power
- real time
- real world
- computational complexity
- memory space
- case study
- circuit design
- social networks
- memory size
- neural network