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Improvement of oxide reliability in NAND flash memories using tight endurance cycling with shorter idling period.

Riichiro ShirotaBo-Jun YangYung-Yueh ChiuYu-Ting WuPin-Yao WangJung-Ho ChangM. YanoM. AokiT. TakeshitaC.-Y. WangI. Kurachi
Published in: IRPS (2015)
Keyphrases
  • lower bound
  • information systems
  • upper bound
  • significant improvement
  • worst case
  • electron microscopy
  • peer to peer
  • flash memory