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Investigations of impact ionization phenomena in advanced transistors and speed-power improvement of BiMOS SRAM cells based on reverse base current effect.
Alexander N. Bubennikov
Andrey V. Zykov
Published in:
Microelectron. Reliab. (2001)
Keyphrases
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power consumption
low power
power management
power saving
real time
high speed
positive effects
negative impact
dual channel
reactive power compensation
significant improvement
high density
negative effects
microscope images