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Analytical modeling for 3D potential distribution of rectangular gate (RecG) gate-all-around (GAA) MOSFET in subthreshold and strong inversion regions.
Dheeraj Sharma
Santosh Kumar Vishvakarma
Published in:
Microelectron. J. (2012)
Keyphrases
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field effect transistors
multiple input
data distribution
steady state
laplace transform
nano scale
neural network
clustering algorithm
object recognition
probability distribution
image features
d objects
spatial distribution
uniformly distributed
cmos technology