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Phase-change random access memory: A scalable technology.

Simone RaouxGeoffrey W. BurrMatthew J. BreitwischCharles T. RettnerYi-Chou ChenRobert M. ShelbyMartin SalingaDaniel KrebsShih-Hung ChenHsiang-Lan LungChung Hon Lam
Published in: IBM J. Res. Dev. (2008)
Keyphrases
  • random access memory
  • embedded dram
  • data processing
  • low voltage
  • high speed
  • design considerations