Zhen Li

Publication Activity (10 Years)

Years Active: 2020-2023
Publications (10 Years): 8

Top Topics

Communication Systems

Topology Preservation

Blind Equalization

Noise Cancellation

Top Venues

Int. J. Circuit Theory Appl.

Circuits Syst. Signal Process.

Microelectron. J.

IET Circuits Devices Syst.

Publications

Zhen Li, Zhenrong Li, Xudong Wang, Zeyuan Wang, Yiqi Zhuang
A low jitter sub-sampling phase-locked loop with sampling thermal noise cancellation technique. Int. J. Circuit Theory Appl. 51 (1) (2023)
Zhen Li, Zhenrong Li, Xudong Wang, Xing Quan, Zeyuan Wang, Yiqi Zhuang
A 22.7- to 44.2-GHz Darlington dual-injection injection-locked frequency tripler with >35dBc harmonic rejection for multiband 5G communication systems. Int. J. Circuit Theory Appl. 50 (4) (2022)
Zhen Li, Zhenrong Li, Xing Quan, Zeyuan Wang, Xinyu Li, Yiqi Zhuang
A 0.6 V 2.7 mW 94.3% locking range injection-locked frequency divider using modified varactor-less Colpitts oscillator topology. IET Circuits Devices Syst. 15 (7) (2021)
Zhenrong Li, Boyu Liu, Yiming Duan, Zeyuan Wang, Zhen Li, Yiqi Zhuang
Flat-High-Gain Design and Noise Optimization in SiGe Low-Noise Amplifier for S-K Band Applications. Circuits Syst. Signal Process. 40 (6) (2021)
Zhen Li, Zhenrong Li, Xing Quan, Zeyuan Wang, Yiqi Zhuang
A 21.6-30.3 GHz injection-locked frequency tripler with Darlington injection for 5G communication systems. Int. J. Circuit Theory Appl. 49 (2) (2021)
Zhenrong Li, Xiayu Cheng, Zeyuan Wang, Zhen Li, Yiqi Zhuang
A Digital Controlled Accurate Linear-in-dB Variable Gain Amplifier Based on Current-Steering Structure with Compensation Circuit. Circuits Syst. Signal Process. 40 (2) (2021)
Zeyuan Wang, Zhenrong Li, Yuxin Wang, Zhen Li, Yiqi Zhuang
Design of high-isolation and low-loss single pole double throw switch based on the triple-coupled transformer for ultra-wideband phased array systems. Int. J. Circuit Theory Appl. 49 (10) (2021)
Zhenrong Li, Yiming Duan, Zhen Li, Zeyuan Wang, Yiqi Zhuang
A 0.3-6 GHz noise and distortion cancelling LNA achieving an NF of 2.8±0.3 dB in 0.18-μm SiGe BiCMOS process. Microelectron. J. 105 (2020)