Mohamed Hussein Eissa

Publication Activity (10 Years)

Years Active: 2016-2023
Publications (10 Years): 18

Top Topics

Cmos Technology

Top Venues

Publications

Batuhan Sutbas, Mohamed Hussein Eissa, Gerhard Kahmen
A Ka-Band VCO Chip with Integrated Dividers Using 1.5 V Supply in 130-nm SiGe BiCMOS Technology for Low-Power Radar Sensors. BCICTS (2023)
Batuhan Sutbas, Mohamed Hussein Eissa, Gerhard Kahmen
Vector Modulator Based Leakage Cancellation Technique for CW Radar Transceiver Frontends. RWS (2023)
Aniello Franzese, Mohamed Hussein Eissa, Dietmar Kissinger, Andrea Malignaggi
Vector Modulator Phase Shifters in 130-nm SiGe BiCMOS Technology for 5G Applications. RWS (2021)
Ahmad Gomaa, Ayman Elezabi, Mohamed Hussein Eissa
Low-complexity subspace method for I/Q imbalance estimation in low-IF receivers with unknown fading. Trans. Emerg. Telecommun. Technol. 32 (3) (2021)
Alper Karakuzulu, Mohamed Hussein Eissa, Dietmar Kissinger, Andrea Malignaggi
A Broadband 110-170 GHz Frequency Multiplier by 4 Chain with 8 dBm Output Power in 130 nm BiCMOS. ESSCIRC (2021)
Nebojsa Maletic, Mohamed Hussein Eissa, Lukasz Lopacinski, Vladica Sark, Jesús Gutiérrez, Eckhard Grass
OFDM Transmission over a Short-Range 240 GHz Wireless Link: Performance Analysis. WSA (2021)
Klaus Schmalz, Nick Rothbart, Alexandra Glück, Mohamed Hussein Eissa, Thomas Mausolf, Esref Turkmen, Selahattin Berk Yilmaz, Heinz-Wilhelm Hübers
Dual-Band Transmitter and Receiver With Bowtie-Antenna in 0.13 μm SiGe BiCMOS for Gas Spectroscopy at 222 - 270 GHz. IEEE Access 9 (2021)
Aniello Franzese, Mohamed Hussein Eissa, Thomas Mausolf, Dietmar Kissinger, Renato Negra, Andrea Malignaggi
Ultra Broadband Low-Power 70 GHz Active Balun in 130-nm SiGe BiCMOS. BCICTS (2020)
Ahmed Gadallah, Mohamed Hussein Eissa, Dietmar Kissinger, Andrea Malignaggi
A V-band Bidirectional Amplifier-Module for Hybrid Phased-Array Systems in BiCMOS Technology. RWS (2020)
Lukasz Lopacinski, Mohamed Hussein Eissa, Goran Panic, Alireza Hasani, Rolf Kraemer
Modular Data Link Layer Processing for THz communication. DDECS (2019)
Mohamed Hussein Eissa, Dietmar Kissinger
A 13.5dBm Fully Integrated 200-to-255GHz Power Amplifier with a 4-Way Power Combiner in SiGe: C BiCMOS. ISSCC (2019)
Lukasz Lopacinski, Miroslav Marinkovic, Goran Panic, Mohamed Hussein Eissa, Alireza Hasani, Karthik KrishneGowda, Rolf Kraemer
Data Link Layer Processor for 100 Gbps Terahertz Wireless Communications in 28 nm CMOS Technology. IEEE Access 7 (2019)
Maciej Kucharski, Mohamed Hussein Eissa, Andrea Malignaggi, Defu Wang, Herman Jalli Ng, Dietmar Kissinger
D-Band Frequency Quadruplers in BiCMOS Technology. IEEE J. Solid State Circuits 53 (9) (2018)
Mohamed Hussein Eissa, Andrea Malignaggi, Ruoyu Wang, Mohamed Elkhouly, Klaus Schmalz, Ahmet Cagri Ulusoy, Dietmar Kissinger
Wideband 240-GHz Transmitter and Receiver in BiCMOS Technology With 25-Gbit/s Data Rate. IEEE J. Solid State Circuits 53 (9) (2018)
Lukasz Lopacinski, Mohamed Hussein Eissa, Goran Panic, Marcin Brzozowski, Alireza Hasani, Rolf Kraemer
Implementation of a Multi-Core Data Link Layer Processor for THz Communication. VTC Spring (2018)
Rahul Kumar Yadav, Jan Wessel, Mohamed Hussein Eissa, Farabi Ibne Jamal, Maciej Kucharski, Dietmar Kissinger
A 30 GHz Power Detector based Reflectometer in 130nm SiGe BiCMOS for Dielectric Spectroscopy. ISCAS (2018)
Farabi Ibne Jamal, Mohamed Hussein Eissa, Johannes Borngräber, Herman Jalli Ng, Dietmar Kissinger, Jan Wessel
A low-power 190-255 GHz frequency quadrupler in SiGe BiCMOS technology for on-chip spectroscopic applications. RWS (2017)
Mohamed Hussein Eissa, Ahmed Awny, Georg Winzer, Marcel Kroh, Stefan Lischke, Dieter Knoll, Lars Zimmermann, Dietmar Kissinger, Ahmet Cagri Ulusoy
A wideband monolithically integrated photonic receiver in 0.25-µm SiGe: C BiCMOS technology. ESSCIRC (2016)