M. Hopkinson

Publication Activity (10 Years)

Years Active: 2006-2009
Publications (10 Years): 0

Publications

Vesel Haxha, Raman Garg, Max A. Migliorato, I. W. Drouzas, J. M. Ulloa, P. M. Koenraad, M. J. Steer, H. Y. Liu, M. Hopkinson, D. J. Mowbray
Empirical bond order potential calculations of the elastic properties of epitaxial InGaSbAs layers. Microelectron. J. 40 (3) (2009)
F. A. M. Marques, A. F. G. Monte, M. Hopkinson
Electric field effects on the carrier migration in self-assembled InAs/GaAs quantum dots. Microelectron. J. 40 (4-5) (2009)
P. D. L. Judson, K. M. Groom, D. T. D. Childs, M. Hopkinson, Nikola Krstajic, Richard A. Hogg
Maximising performance of optical coherence tomography systems using a multi-section chirped quantum dot superluminescent diode. Microelectron. J. 40 (3) (2009)
J. S. Ng, H. Y. Liu, M. J. Steer, M. Hopkinson, J. P. R. David
Photoluminescence beyond 1.5mum from InAs quantum dots. Microelectron. J. 37 (12) (2006)
J. C. Lin, P. W. Fry, Richard A. Hogg, M. Hopkinson, Ian Mark Ross, A. G. Cullis, R. S. Kolodka, A. I. Tartakovskii, M. S. Skolnick
The control of size and areal density of InAs self-assembled quantum dots in selective area molecular beam epitaxy on GaAs (001) surface. Microelectron. J. 37 (12) (2006)