Ken Miyauchi

Publication Activity (10 Years)

Years Active: 2014-2023
Publications (10 Years): 5

Top Topics

Spatially Varying

Cmos Image Sensor

Top Venues

VLSI Technology and Circuits

Publications

Ken Miyauchi, Toshiyuki Isozaki, Rimon Ikeno, Junichi Nakamura
Analysis of Light Intensity and Charge Holding Time Dependence of Pinned Photodiode Full Well Capacity. Sensors 23 (21) (2023)
Song Chen, Chiao Liu, Lyle Bainbridge, Qing Chao, Ramakrishna Chilukuri, Wei Gao, Andrew P. Hammond, Tsung-Hsun Tsai, Ken Miyauchi, Isao Takayanagi, Masato Nagamatsu, Hirofumi Abe, Kazuya Mori, Masayuki Uno, Toshiyuki Isozaki, Rimon Ikeno, Hsin-Li Chen, Chih-Hao Lin, Wen-Chien Fu, Shou-Gwo Wuu
A 3.96μm, 124dB Dynamic Range, 6.2mW Stacked Digital Pixel Sensor with Monochrome and Near-Infrared Dual-Channel Global Shutter Capture. VLSI Technology and Circuits (2023)
Ai Otani, Hiroaki Ogawa, Ken Miyauchi, Sangman Han, Hideki Owada, Isao Takayanagi, Shunsuke Okura
An Area-Efficient up/down Double-Sampling Circuit for a LOFIC CMOS Image Sensor. Sensors 23 (9) (2023)
Ken Miyauchi, Kazuya Mori, Toshinori Otaka, Toshiyuki Isozaki, Naoto Yasuda, Alex Tsai, Yusuke Sawai, Hideki Owada, Isao Takayanagi, Junichi Nakamura
A Stacked Back Side-Illuminated Voltage Domain Global Shutter CMOS Image Sensor with a 4.0 μm Multiple Gain Readout Pixel. Sensors 20 (2) (2020)
Isao Takayanagi, Ken Miyauchi, Shunsuke Okura, Kazuya Mori, Junichi Nakamura, Shigetoshi Sugawa
A 120-ke- Full-Well Capacity 160-µV/e- Conversion Gain 2.8-µm Backside-Illuminated Pixel with a Lateral Overflow Integration Capacitor. Sensors 19 (24) (2019)
F. Shao, D. Kimoto, K. Furukawa, Hidetake Sugo, T. Takeda, Ken Miyauchi, Yasuhisa Tochigi, Rihito Kuroda, Shigetoshi Sugawa
Ultra-high speed video capturing of time dependent dielectric breakdown of metal-oxide-silicon capacitor up to 10M frame per second. IMSE (2014)
Ken Miyauchi, Tohru Takeda, K. Hanzawa, Yasuhisa Tochigi, S. Sakai, Rihito Kuroda, H. Tominaga, R. Hirose, K. Takubo, Y. Kondo, Shigetoshi Sugawa
Pixel structure with 10 nsec fully charge transfer time for the 20m frame per second burst CMOS image sensor. IMSE (2014)