Huanbo Li

Publication Activity (10 Years)

Years Active: 2020-2023
Publications (10 Years): 9

Top Topics

Phase Shift Keying

Power Consumption

Top Venues

IEEE Trans. Circuits Syst. II Express Briefs

IEEE J. Solid State Circuits

Sci. China Inf. Sci.

Publications

Zekun Li, Jixin Chen, Huanbo Li, Jiayang Yu, Yuxiang Lu, Rui Zhou, Zhe Chen, Wei Hong
A 220-GHz Sliding-IF Quadrature Transmitter and Receiver Chipset for High Data Rate Communication in 0.13-µm SiGe BiCMOS. IEEE J. Solid State Circuits 58 (7) (2023)
Jiayang Yu, Jixin Chen, Peigen Zhou, Huanbo Li, Zuojun Wang, Zekun Li, Zhe Chen, Pinpin Yan, Debin Hou, Hao Gao, Wei Hong
and 16.4-dB Peak Gain in 130-nm SiGe BiCMOS. IEEE J. Solid State Circuits 58 (2) (2023)
Huanbo Li, Jixin Chen, Debin Hou, Zekun Li, Rui Zhou, Zhe Chen, Pinpin Yan, Wei Hong
W-band Scalable 2×2 Phased-Array Transmitter and Receiver Chipsets in SiGe BiCMOS for High Data-Rate Communication. IEEE J. Solid State Circuits 57 (9) (2022)
Huanbo Li, Jixin Chen, Peigen Zhou, Debin Hou, Wei Hong
A SiGe W-band frequency tripler with 10.5 dBm output power using harmonic suppression technique. Sci. China Inf. Sci. 65 (4) (2022)
Zekun Li, Jixin Chen, Jiayang Yu, Huanbo Li, Zichun Zheng, Rui Zhou, Peigen Zhou, Zhe Chen, Wei Hong
A 220 GHz Sliding-IF Quadrature Transmitter With 38-dB Conversion Gain and 8-dBm Psat in 0.13-µm SiGe BiCMOS. CICC (2022)
Long Wang, Jixin Chen, Debin Hou, Huanbo Li, Zekun Li, Yu Xiang, Xiaojie Xu, Wei Hong
A Variable Gain Power Amplifier Based on Switched-Capacitor Array With Stable Linearity. IEEE Trans. Circuits Syst. II Express Briefs 69 (2) (2022)
Huanbo Li, Jixin Chen, Debin Hou, Zekun Li, Rui Zhou, Wei Hong
A 94GHz Scalable 2 × 2 Phased-Array Receiver in SiGe BiCMOS for High Data-Rate Communication. CICC (2021)
Huanbo Li, Jixin Chen, Debin Hou, Zekun Li, Zuojun Wang, Wei Hong
A High-Linearity Adaptive-Bias SiGe Power Amplifier for 5G Communication. IEEE Trans. Circuits Syst. II Express Briefs 68 (8) (2021)
Huanbo Li, Jixin Chen, Debin Hou, Wei Hong
A W-Band 6-Bit Phase Shifter With 7 dB Gain and 1.35° RMS Phase Error in 130 nm SiGe BiCMOS. IEEE Trans. Circuits Syst. II Express Briefs (10) (2020)