Daniel Pasquet

Publication Activity (10 Years)

Years Active: 2000-2019
Publications (10 Years): 2

Top Topics

Fully Integrated

Spatially Localized

Semiconductor Devices

Top Venues

IEEE Instrum. Meas. Mag.

J. Circuits Syst. Comput.

Publications

Kassem Hamze, Daniel Pasquet, Philippe Descamps, Edouard De Ledinghen
Applied TRL Calibration Method to Differential Devices Embedded in a Test Board. RWS (2019)
Daniel Pasquet
The Bordeaux student branch BEE week: Bordeaux, France Nov. IEEE Instrum. Meas. Mag. 21 (5) (2018)
Miled Ben Salah, Daniel Pasquet, Frederic Voiron, Philippe Descamps, Jean Luc Lefebvre, Dominique Lesenechal
Reducing substrate noise coupling in a 3D-PICS Integrated Passive Device by localized P+ guard rings. RWS (2013)
Miled Ben Salah, Daniel Pasquet, Frederic Voiron, Philippe Descamps, Jean Luc Lefebvre, Dominique Lesenechal
Reducing substrate noise coupling in a 3D-PICS Integrated Passive Device by localized P+ guard rings. WiSNet (2013)
Meriam Ben Amor, Mourad Loulou, Sébastien Quintanel, Daniel Pasquet
A Fully Integrated Multiband CMOS 0.35 μM LNA for IEEE802.16 Standard. J. Circuits Syst. Comput. 22 (2) (2013)
Meriam Ben Amor, Mourad Loulou, Sébastien Quintanel, Daniel Pasquet
An integrated 0.35µm CMOS technology inductor for wideBand LNA application. ICT (2009)
Frédérique Giannini, Emmanuelle Bourdel, Daniel Pasquet
A New Method to Extract Noise Parameters Based on a Frequency- and Time-Domain Analysis of Noise Power Measurements. IEEE Trans. Instrum. Meas. 57 (2) (2008)
Moez Balti, Abdelaziz Samet, Daniel Pasquet
A FET propagation effects. ICECS (2007)
Moez Balti, Abdelaziz Samet, Daniel Pasquet, Emmanuelle Bourdel
Noise Modeling Including Effect of propagation along the gate of a field-effect transistor. ICECS (2005)
Emmanuelle Bourdel, Daniel Pasquet, Paul Denorme, Alain Roussel
mode. IEEE Trans. Instrum. Meas. 49 (5) (2000)