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A 33-ppm/°C 240-nW 40-nm CMOS Wakeup Timer Based on a Bang-Bang Digital-Intensive Frequency-Locked-Loop for IoT Applications.

Ming DingZhihao ZhouStefano TraferroYao-Hong LiuChristian BachmannFabio Sebastiano
Published in: IEEE Trans. Circuits Syst. I Regul. Pap. (2020)
Keyphrases
  • circuit design
  • metal oxide semiconductor
  • low cost
  • high speed
  • low power
  • digital technologies
  • low frequency
  • analog vlsi
  • wireless sensor networks
  • big data
  • location information
  • integrated circuit
  • cmos technology