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Total Dose and Single Event Effects on 16 Mbit Standalone Spin-Transfer Torque MRAM with 45 nm CMOS Technology.

Anni CaoXin LiLiang WangJianpeng ZhangChunliang GouLiquan LiuBi WangXing ZhangYuanfu Zhao
Published in: APCCAS (2022)
Keyphrases
  • cmos technology
  • low power
  • power consumption
  • parallel processing
  • spl times
  • low voltage
  • silicon on insulator
  • digital images
  • high speed
  • power dissipation
  • pattern recognition
  • image analysis
  • multi view