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A 28-GHz-band Stacked FET Linear Power Amplifier IC with 36.2 % PAE at 3-dB back-off from P1dB in 56-nm SOI CMOS.
Cuilin Chen
Tsuyoshi Sugiura
Toshihiko Yoshimasu
Published in:
RWS (2019)
Keyphrases
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silicon on insulator
power consumption
high speed
high power
ibm power processor
low power
frequency band
database
power supply
chip design
infrared
power dissipation