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Scalable 0.35 V to 1.2 V SRAM Bitcell Design From 65 nm CMOS to 28 nm FDSOI.
Fady Abouzeid
Audrey Bienfait
Kaya Can Akyel
Anis Feki
Sylvain Clerc
Lorenzo Ciampolini
Fabien Giner
Robin Wilson
Philippe Roche
Published in:
IEEE J. Solid State Circuits (2014)
Keyphrases
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cmos technology
nm technology
power consumption
low power
knowledge based systems
power dissipation
user interface
real time
neural network
high speed
engineering design
single chip
power reduction