(Ba, Sr)TiO3 dielectrics for future stacked- capacitor DRAM.

David E. Kotecki John D. Baniecki Hua Shen Robert B. Laibowitz Katherine L. Saenger Jingyu Jenny Lian Thomas M. Shaw Satish D. Athavale Cyril Cabral Jr.Peter R. Duncombe Martin Gutsche Gerhard Kunkel Young-Jin Park Yun-Yu Wang Richard Wise

Published in: IBM J. Res. Dev. (1999)

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