Effective gate length model for asymmetrical gate-all-around silicon nanowire transistors.
Xiaoqiao DongMing LiWanrong ZhangYuancheng YangGong ChenShuang SunJianing WangXiaoyan XuXia AnPublished in: Sci. China Inf. Sci. (2020)
Keyphrases
- probabilistic model
- experimental data
- management system
- mathematical model
- prior knowledge
- neural network
- computational model
- database
- high level
- objective function
- high speed
- formal model
- simulation model
- conceptual model
- statistical model
- theoretical framework
- probability distribution
- cost function
- decision trees
- data sets